: 600v mar. 2011. rev. 2.0 1/7 : 0.7ohm copyright@ semipower electronic technology co., ltd. all rights reserved. sw sw 12 12 n60 n60 features high ruggedness r ds(on) (max 0.7 ? )@v gs =10v gate charge (typ 58nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. it is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. n-channel mosfet absolute maximum ratings symbol parameter value unit to-220 to-220f v dss drain to source voltage 600 v i d continuous drain current (@t c =25 o c) 12.0 12.0* a continuous drain current (@t c =100 o c) 7.0 7.0* a i dm drain current pulsed (note 1) 48 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 960 mj e ar repetitive avalanche energy (note 1) 22.5 mj dv/dt peak diode recovery dv/dt (note 3) 5.0 v/ns p d total power dissipation (@t c =25 o c) 165 52* w derating factor above 25 o c 1.32 0.42 w/ o c t stg , t j operating junction temperat ure & storage temperature -55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit to-220 to-220f r thjc thermal resistance, junction to case 0.76 2.4 o c/w r thcs thermal resistance, case to sink 0.5 o c/w r thja thermal resistance, junction to ambient 62.5 o c/w *. drain current is limited by junction temperature. bv dss i d : 12.0a r ds(on) 1. gate 2. drain 3. source to-220f to-220 1 2 3 samwin 1 2 3 1 2 3
i 600 2/7 0.7 copyright@ semipower electronic technology co., ltd. all rights reserved. electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.63 - v/ o c i dss drain to source leakage current v ds =600v, v gs =0v - - 1 ua v ds =480v, t c =125 o c - - 50 ua gss gate to source leak age current, forward v gs =30v, v ds =0v - - 100 na v gs =-30v, v ds =0v - - -100 na gate to source leak age current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.0 - 4.0 v r ds(on) drain to source on state resistance v gs =10v, i d = 6a ? dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 1950 2530 pf c oss output capacitance 156 205 c rss reverse transfer capacitance 32 42 t d(on) turn on delay time v ds =300v, i d =12a, r g =25 ? 25 60 ns tr rising time 73 180 t d(off) turn off delay time 148 300 t f fall time 76 160 q g total gate charge v ds =480v, v gs =10v, i d =12a 47 60 nc q gs gate-source charge 9 - q gd gate-drain charge 30 - source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p-n junction diode in the mosfet - - 12 a i sm pulsed source current - - 48 a v sd diode forward voltage drop. i s =12a, v gs =0v - - 1.5 v t rr reverse recovery time i s =12a, v gs =0v, di f /dt=100a/us - 400 - ns q rr breakdown voltage temperature - 4.8 - uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 13mh, i as = 12.0a, v dd = 50v, r g =50 ? , starting t j = 25 o c 3. i sd 12.0a, di/dt = 300a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. sw sw 12 12 n60 n60 samwin
3/7 copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 1. on-state characteristics fig. 2. transfer characteristics fig. 3. on-resistance variation vs. drain current and gate voltage fig. 5. capacitance characteristics (non-repetitive) fig. 6. gate charge characteristics fig. 4. on state current vs. diode forward voltage 10 0 10 1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 0.5 1.0 1.5 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 1020304050 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v note : i d = 12a v gs , gate-source voltage [v] q g , total gate charge [nc] sw sw 12 12 n60 n60 samwin
4/7 copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 9. maximum drain current vs. case temperature. fig. 8. on resistance variation vs. junction temperature fig. 10. maximum safe operating area (to-220f) fig. 11. transient thermal response curve fig 7. breakdown voltage variation vs. junction temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *. notes : 1. v gs = 0 v 2. i d = 250 ua bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *. notes : 1. v gs = 10 v 2. i d = 6.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 10 12 14 i d , drain current [a] t c , case temperature [ ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 2.43 /w m ax. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) sin g le p u lse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), t herm al r esponse t 1 , square w ave pulse duration [sec] t 1 p dm t 2 sw sw 12 12 n60 n60 samwin
5/7 copyright@ semipower electronic technology co., ltd. all rights reserved. v ds same type as dut dut v gs 1ma q g q gs q gd v gs charge v dd dut v ds r l r g 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f v dd dut v ds l r g 10v in i as t p time i d(t) bv dss i as v ds(t) eas = l x i as 2 x bv dss -v dd bv dss 2 1 fig. 12. gate charge test circuit & waveform fig. 13. switching time test circuit & waveform fig. 14. unclamped inductive switching test circuit & waveform sw sw 12 12 n60 n60 samwin
6/7 copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 15. peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v v gs gs (driver) (driver) i i s s (dut) (dut) v v ds ds (dut) (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd sw sw 12 12 n60 n60 samwin
copyright@ semipower electronic technology co., ltd. all rights reserved. sw12n60 samwin revision history revision no. changed characteristics responsible date issuer rev 1.0 origination, first release alice nie 2007.12.05 xzq rev 2.0 updated the format of datasheet and added order codes. alice nie 2011.03.24 xzq ????? ? ? 25 ? mf6 029 - 88253717 029 - 88251977 ???? ?? a 2005 0755 - 83981818 0755 - 83476838 www.semipower.com.cn 7/7
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